Book (Practical) Electrical engineering Element devices for switching power supplies : Kenji Taniguchi

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Electrical Engineering
[Introduction]
[Contents]
[Contents]
[Contents]
* Due to pre-publication information, some changes may be made.
1. Semiconductor Properties
1.1 Electron and hole concentration in silicon crystal
1.2 Electrical Conduction of Semiconductors
1.3 Impact Ionization Phenomena
1.4 Electron-hole recombination
2. Basic Device Structure of Power Semiconductor Devices
2.1 Diode
2.1.1 Depletion width and capacitance of pn junction
2.1.2 Breakdown voltage of pn junction diode
2.1.3 Voltage and current characteristics of diode
2.1.4 Actual Pn Junction Diode Characteristics
Issues 5.4 GaN devices
5.5 Double Pulse Test
5.5.1 Turn-Off Process
5.5.2 Turn-On Process
6. Thermal Analysis of Power Devices
Physics of Heat Conduction
Steady-State Solution of Temperature of Heat Elements
Transient solution of Temperature of Heat Elements
Constant temperature of Heat Elements
Transient solution of Temperature of Heat Elements
Constant temperature of Heat Elements
Constant temperature of Heat Elements
Constant temperature of Heat Elements
Constant temperature of Heat Elements
Selection of Thermal Materials (Magnetic Core, Coated Copper Wire)
How to Wrap Copper Wire
Electrostatic Shielding (Faraday Shield)
References
Index 2.1.5 2.2 2.2.1 2.2.2 2.2.3 2.3 2.3.1 2.3.2 3.1 3.1.1 3.1.2 3.1.3 3.1.4 3.2 3.2.1 3.2.2 4.1 4.1.1 4.1.2 4.1.3 4.2 4.2.1 4.2.2 4.2.3 5.1 5.2 5.2.1 5.3 5.3.1 5.3.2 6.1 6.2 6.3 6.3.1 6.3.2 6.3.3 6.3.4 7.1 7.1.1 7.1.2 7.2 7.2.1 7.2.2 7.2.3 7.3 7.3.1 7.3.2 7.3.3 7.3.4 7.4 7.4.1 7.4.2 7.4.3 7.4.4 7.5 7.5.1 7.5.2 7.5.3 7.5.4 7.5.5 8.1 8.1.1 8.1.2 8.1.3 8.2 8.2.1 8.2.2 8.3 8.3.1 8.3.2 9.1 9.1.1 9.1.2 9.2 10.1 10.2 10.2.1 10.2.2 10.2.3 Pola